التفاصيل البيبلوغرافية
| العنوان: |
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting. |
| المؤلفون: |
Carraro, Chiara1,2 (AUTHOR) chr.carraro@gmail.com, Milazzo, Ruggero1,2 (AUTHOR), Sgarbossa, Francesco1,2 (AUTHOR), Fontana, Daris1 (AUTHOR), Maggioni, Gianluigi1,2 (AUTHOR), Raniero, Walter2 (AUTHOR), Scarpa, Daniele2 (AUTHOR), Baldassarre, Leonetta3 (AUTHOR), Ortolani, Michele3 (AUTHOR), Andrighetto, Alberto2 (AUTHOR), Napoli, Daniel R.2 (AUTHOR), De Salvador, Davide1,2 (AUTHOR), Napolitani, Enrico1,2 (AUTHOR) |
| المصدر: |
Applied Surface Science. Apr2020, Vol. 509, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*PULSED laser deposition, *NUCLEAR counters, *CHARGE carrier mobility, *INFRARED cameras, *DIFFUSION |
| مستخلص: |
• Sb heavy doping of Ge is obtained combining sputtering and pulsed laser melting. • After pulsed laser melting all the Sb has diffused into Ge, independently of the initial deposition thickness. • A carrier saturation level of 3·1020 cm−3 is reached. • A record low resistivity of 1.4·10−4 Ω·cm is reached. • HR-XRD confirmed epitaxial recrystallization of the doped Ge layer after PLM with excellent crystalline quality. The fabrication of highly doped and high quality Ge layers is a challenging and hot topic for advancements in nanoelectronics, photonics and radiation detectors. In this article, we report on a simple method for junction formation consisting in sputter depositing or evaporating a thin pure Sb layer on Ge followed by cycles of Pulsed Laser Melting (PLM). We show that PLM promotes an efficient diffusion of high Sb concentrations into the melted Ge subsurface layer, followed by a fast epitaxial regrowth. The resulting layer is perfectly pseudomorphic to the Ge substrate, preserving the high strain level induced by the Sb, having covalent radius higher than Ge. In addition, it shows extremely high active concentrations up to 3 × 1020 cm−3 and a record low resistivity of 1.4 × 10-4 Ohm cm. The carrier mobility is also in line with the extrapolation of literature data with no signs of mobility degradation. Furthermore, infrared reflectivity confirms the good optical quality of the doped layers and demonstrates, for the first time, plasma wavelengths in Ge below 3 µm. These results are highly relevant for nanolectronic and plasmonic applications. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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