التفاصيل البيبلوغرافية
| العنوان: |
1.58 mu m InGaAs quantum well laser on GaAs |
| المؤلفون: |
Tangring, I, Ni, HQ, Wu, BP, Wu, DH, Xiong, YH, Huang, SS, Niu, ZC, Wang, SM, Lai, ZH, Larsson, A, Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se |
| سنة النشر: |
2007 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Dot Lasers, Growth, 半导体器件, development, 展开, ontogeny, alloy development, 增长性, animal growth, hypertrophy, maturing, growth rate (animals) |
| الوصف: |
We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
APPLIED PHYSICS LETTERS; Tangring, I; Ni, HQ; Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Niu, ZC; Wang, SM; Lai, ZH; Larsson, A .1.58 mu m InGaAs quantum well laser on GaAs ,APPLIED PHYSICS LETTERS,2007 ,91(22): Art. No. 221101; http://ir.semi.ac.cn/handle/172111/6964Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/6964Test |
| رقم الانضمام: |
edsbas.4253609F |
| قاعدة البيانات: |
BASE |
