التفاصيل البيبلوغرافية
| العنوان: |
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy |
| المؤلفون: |
Wu, BP, Wu, DH, Ni, HQ, Huang, SS, Zhan, F, Xiong, YH, Xu, YQ, Niu, ZC, Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wudonghai@red.semi.ac.cn |
| سنة النشر: |
2007 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Layers, Surfactant, Substrate, Hemt, Sb, 半导体材料, modulation-doped field-effect transistors, antimony, lamina, plies, 底物, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt |
| الوصف: |
We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
CHINESE PHYSICS LETTERS; Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC .Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2007 ,24(12): 3543-3546; http://ir.semi.ac.cn/handle/172111/6952Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/6952Test |
| رقم الانضمام: |
edsbas.801D9669 |
| قاعدة البيانات: |
BASE |
