التفاصيل البيبلوغرافية
| العنوان: |
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers |
| المؤلفون: |
Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC, Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. |
| سنة النشر: |
2009 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Inas Quantum Dots, Metamorphic Buffer, Molecular Beam Epitaxy, 半导体化学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition |
| الوصف: |
In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; Wu BP; Wu DH; Xiong YH; Huang SS; Ni HQ; Xu YQ; Niu ZC .Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers ,JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,2009 ,9(2):1333-1336; http://ir.semi.ac.cn/handle/172111/7331Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/7331Test |
| رقم الانضمام: |
edsbas.FA6582E6 |
| قاعدة البيانات: |
BASE |
