دورية أكاديمية

High-efficiency shallow-etched grating on GaAs membranes for quantum photonic applications.

التفاصيل البيبلوغرافية
العنوان: High-efficiency shallow-etched grating on GaAs membranes for quantum photonic applications.
المؤلفون: Zhou, Xiaoyan, Kulkova, Irina, Lund-Hansen, Toke, Hansen, Sofie Lindskov, Lodahl, Peter, Midolo, Leonardo
المصدر: Applied Physics Letters; 12/17/2018, Vol. 113 Issue 25, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs
مصطلحات موضوعية: GALLIUM arsenide, NANOSTRUCTURED materials, NANOFABRICATION, INTEGRATED circuits, SEMICONDUCTOR quantum dots, OPTICAL fibers, PHOTON counting, QUANTUM information science
مستخلص: We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling efficiency of >60%, a greatly suppressed back reflection of <1% for the designed wavelength of 930 nm, and a 3-dB bandwidth of >43 nm. Highly efficient single-photon collection from embedded indium arsenide quantum dots to an optical fiber was realized with the designed grating, showing an average six-fold increase in the photon count compared to commonly used circular gratings, offering an efficient interface for on-chip quantum information processing. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:00036951
DOI:10.1063/1.5055622