التفاصيل البيبلوغرافية
| العنوان: |
Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer. |
| المؤلفون: |
Barhate, Viral N.1 (AUTHOR), Agrawal, Khushabu S.1,2 (AUTHOR), Patil, Vilas S.1,2 (AUTHOR), Patil, Sumit R.1 (AUTHOR), Mahajan, Ashok M.1 (AUTHOR) ammahajan@nmu.ac.in |
| المصدر: |
Materials Science in Semiconductor Processing. Oct2020, Vol. 117, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*PASSIVATION, *ATOMIC layer deposition, *SURFACE passivation, *ELECTRIC currents, *PERMITTIVITY |
| مستخلص: |
The effect of in-situ LaON surface passivation in between La 2 O 3 /ZrO 2 bilayer high-k and N 2 plasma pre-treated 4H–SiC substrate formed by using plasma enhanced atomic layer deposition has been investigated. The ~40 nm and ~35 nm thicknesses of high-k bilayer stack with and without LaON on SiC substrate respectively were determined by cross sectional FESEM. The FTIR and XRD results reveal that, the deposition of the La 2 O 3 and ZrO 2 as well as the formation of silicate at interface was found on both samples. The presence of the LaON passivation layer in MOS device exhibits significantly improved interfacial and electrical properties in terms of lower density of interface traps (D it), lower number of effective oxide charges per unit area (Q eff) and low leakage current density (J V). Furthermore, the high electric field 8.2 MV/cm without breakdown and dielectric constant of 8.03 was found for Al/La 2 O 3 /ZrO 2 /LaON/SiC as compared to that of Al/La 2 O 3 /ZrO 2 /SiC MOS device. The Fowler–Nordheim tunneling in both 4H–SiC MOS devices has been studied. The results reported here suggest that the Al/La 2 O 3 /ZrO 2 /LaON/SiC devices are useful for high power device applications. • LaON passivation layer in between bilayer high-k and 4H–SiC substrate was investigated. • The presence of LaON passivation layer has reduced the interface traps at La 2 O 3 /ZrO 2 and 4H–SiC interface. • Significantly improved the leakage current density and electric field with LaON passivation Layer. • Fabricated La 2 O 3 /ZrO 2 /LaON/4H–SiC MOS device observed to have enhanced performance. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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