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1دورية أكاديمية
المؤلفون: Seoane, Natalia, Indalecio, Guillermo, Nagy, Daniel, García-Loureiro, Antonio J., Kalna, Karol
المصدر: IEEE Transactions on Electron Devices; Feb2018, Vol. 65 Issue 2, p456-462, 7p
مصطلحات موضوعية: NANOSTRUCTURED materials, FINITE element method, MONTE Carlo method, DIFFUSION, DENSITY, FABRICATION (Manufacturing)
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2دورية أكاديمية
المؤلفون: Nagy, Daniel1, Kalna, Karol1, Elmessary, Muhammad A.1,2, Aldegunde, Manuel3, Seoane, Natalia4, Indalecio, Guillermo4, García-Loureiro, Antonio J.4, Lindberg, Jari5, Dettmer, Wulf6, Perić, Djordje6
المصدر: Solid-State Electronics. Feb2017, Vol. 128, p17-24. 8p.
مصطلحات موضوعية: *SILICON nanowires, *FINITE element method, *MONTE Carlo method
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3دورية أكاديميةComparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs.
المؤلفون: Seoane, Natalia, Indalecio, Guillermo, Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J., Kalna, Karol
المصدر: IEEE Transactions on Electron Devices; Mar2016, Vol. 63 Issue 3, p1209-1216, 8p
مصطلحات موضوعية: SURFACE roughness, FIELD-effect transistors, INTRINSIC semiconductors, INDIUM gallium arsenide, FINITE element method
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4دورية أكاديمية
المصدر: IEEE Transactions on Electron Devices; May2013, Vol. 60 Issue 5, p1561-1567, 7p
مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, MONTE Carlo method, ELECTRON transport, FINITE element method, NANOELECTROMECHANICAL systems, SILICON-on-insulator technology
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5دورية أكاديمية
المؤلفون: Garcia-Loureiro, Antonio J., Seoane, Natalia, Aldegunde, Manuel, Valin, Raúl, Asenov, Asen, Martinez, Antonio, Kalna, Karol
المصدر: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems; Jun2011, Vol. 30 Issue 6, p841-851, 11p
مصطلحات موضوعية: QUANTUM electronics, SIMULATION methods & models, GATE array circuits, NANOELECTRONICS, FINITE element method, FINITE differences, METAL oxide semiconductor field-effect transistors, GREEN'S functions