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1دورية أكاديمية
المؤلفون: Seoane, Natalia, Fernandez, Julian G., Kalna, Karol, Comesana, Enrique, Garcia-Loureiro, Antonio
المصدر: IEEE Electron Device Letters; Oct2021, Vol. 42 Issue 10, p1416-1419, 4p
مصطلحات موضوعية: THRESHOLD voltage, SCHRODINGER equation, NANOWIRES, FIELD-effect transistors, STANDARD deviations, SILICON nanowires
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2دورية أكاديمية
المؤلفون: Nagy, Daniel, Elmessary, Muhammad A., Aldegunde, Manuel, Valin, Raul, Martinez, Antonio, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J., Kalna, Karol
المصدر: Nagy , D , Elmessary , M A , Aldegunde , M , Valin , R , Martinez , A , Lindberg , J , Dettmer , W G , Peric , D , Garcia-Loureiro , A J & Kalna , K 2015 , ' 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections ' , IEEE Transactions on Nanotechnology , vol. 14 , no. 1 , 6948329 , pp. 93-100 . https://doi.org/10.1109/TNANO.2014.2367095Test
مصطلحات موضوعية: cross-section shapes, FinFET, Monte Carlo simulations, NEGF simulations
الإتاحة: https://doi.org/10.1109/TNANO.2014.2367095Test
https://hdl.handle.net/1983/ea561da7-e960-48f7-919c-f8a1a7421086Test
https://research-information.bris.ac.uk/en/publications/ea561da7-e960-48f7-919c-f8a1a7421086Test
http://www.scopus.com/inward/record.url?scp=84921033597&partnerID=8YFLogxKTest -
3دورية أكاديمية
المؤلفون: Seoane, Natalia, Indalecio, Guillermo, Nagy, Daniel, García-Loureiro, Antonio J., Kalna, Karol
المصدر: IEEE Transactions on Electron Devices; Feb2018, Vol. 65 Issue 2, p456-462, 7p
مصطلحات موضوعية: NANOSTRUCTURED materials, FINITE element method, MONTE Carlo method, DIFFUSION, DENSITY, FABRICATION (Manufacturing)
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4دورية أكاديمية
المؤلفون: Lindberg, Jari, Aldegunde, Manuel, Nagy, Daniel, Dettmer, Wulf G., Kalna, Karol, Garcia-Loureiro, Antonio Jesus, Peric, Djordje
المصدر: IEEE Transactions on Electron Devices; Feb2014, Vol. 61 Issue 2, p423-429, 7p
مصطلحات موضوعية: MONTE Carlo method, SOLID modeling (Engineering), LOGIC circuits, FIELD-effect transistors, PERFORMANCE of field-effect transistors, SCHRODINGER equation, MATHEMATICAL models
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5دورية أكاديمية
المصدر: IEEE Transactions on Electron Devices; May2013, Vol. 60 Issue 5, p1561-1567, 7p
مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, MONTE Carlo method, ELECTRON transport, FINITE element method, NANOELECTROMECHANICAL systems, SILICON-on-insulator technology