التفاصيل البيبلوغرافية
| العنوان: |
Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥ 0.10. |
| المؤلفون: |
Smylie, M. P.1,2, Claus, H.1, Kwok, W.-K.1, Louden, E. R.2, Eskildsen, M. R.2, Sefat, A. S.3, Zhong, R. D.4,5, Schneeloch, J.4,6, Gu, G. D.4, Bokari, E.7, Niraula, P. M.7, Kayani, A.7, Dewhurst, C. D.8, Snezhko, A.1, Welp, U.1 |
| المصدر: |
Physical Review B. 1/8/2018, Vol. 97 Issue 2, p1-1. 1p. |
| مصطلحات موضوعية: |
*SUPERCONDUCTORS, *TOPOLOGICAL insulators, *FERROELECTRIC devices |
| مستخلص: |
The temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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