التفاصيل البيبلوغرافية
| العنوان: |
Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers. |
| المؤلفون: |
Chatterjee, Abhishek1 cabhishek@rrcat.gov.in, Khamari, Shailesh K.1, Kumar, R.1, Dixit, V. K.1, Oak, S. M.1, Sharma, T. K.1 tarun@rrcat.gov.in |
| المصدر: |
Applied Physics Letters. 1/12/2015, Vol. 106 Issue 2, p1-5. 5p. 1 Diagram, 4 Graphs. |
| مصطلحات موضوعية: |
*ELECTRIC properties of gallium arsenide, *GALLIUM arsenide devices, *VAPOR phase epitaxial growth, *HYDRIDES, *METAL organic chemical vapor deposition, *COMPARATIVE studies |
| مستخلص: |
GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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