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1دورية أكاديمية
المؤلفون: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
المصدر: Micromachines, Vol 12, Iss 11, p 1296 (2021)
مصطلحات موضوعية: GaN, SBD, Schottky barrier diode, simulation, current collapse, electric field, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2
المؤلفون: Tianchun Ye, Xuanwu Kang, Hao Wu, Xinyu Liu, Ke Wei, Yingkui Zheng, Haitao Zhang, Zhi Jin
المصدر: Micromachines, Vol 12, Iss 1296, p 1296 (2021)
Micromachines
Volume 12
Issue 11مصطلحات موضوعية: Schottky barrier diode, Materials science, SBD, acceptor trap, Article, GaN, Electric field, TJ1-1570, Mechanical engineering and machinery, current collapse, Electrical and Electronic Engineering, Electronic band structure, business.industry, Mechanical Engineering, Doping, Schottky diode, simulation, Acceptor, electric field, conduction band energy, Control and Systems Engineering, Optoelectronics, Transient (oscillation), Current (fluid), business, Technology CAD
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddaf94b211d2777653e6519f98b57f77Test
https://doi.org/10.3390/mi12111296Test -
3
المؤلفون: Yingkui Zheng, Shuo Yang, Ke Wei, Hongwei Gao, Xuanwu Kang, Sen Huang, Qian Sun, Kevin J. Chen, Jie Fan, Shi Jingyuan, Xinyu Liu, Haibo Yin, Xinhua Wang, Xiao Lei Wang, Wenwu Wang
المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
مصطلحات موضوعية: 010302 applied physics, Physics, Deep-level transient spectroscopy, Condensed matter physics, 020208 electrical & electronic engineering, Oxide, Heterojunction, 02 engineering and technology, Electron, 01 natural sciences, Capacitance, chemistry.chemical_compound, chemistry, Gate oxide, Electric field, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Constant (mathematics)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::af83bb9ad23047109ed721ae2319ecc7Test
https://doi.org/10.1109/ispsd.2019.8757587Test -
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المؤلفون: Yingkui Zheng, Sen Huang, Xinhua Wang, Yuan-Qi Jiang, Weijun Luo, Xinyu Liu, Lei Pang, Guoguo Liu, Tingting Yuan, Ke Wei, Xiaojuan Chen
المصدر: 2013 IEEE International Integrated Reliability Workshop Final Report.
مصطلحات موضوعية: Barrier layer, Stress (mechanics), Materials science, business.industry, Electric field, Wide-bandgap semiconductor, Optoelectronics, Heterojunction, High-electron-mobility transistor, Current (fluid), business, Voltage
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::ad3a7c9f622d19bf6106147c4442c06cTest
https://doi.org/10.1109/iirw.2013.6804175Test