المؤلفون: Konczykowska, A., Hersent, Romain, Jorge, F., Riet, M., Nodjiadjim, V., Mismer, C., Bolognesi, C., Ostinelli, O., Dupuy, J.-Y.

المساهمون: Alcatel-Thalès III-V lab (III-V Lab), THALES France -ALCATEL, Nokia Bell Labs, ALCATEL, Millimeter-Wave Electronics Laboratory ETH Zürich (MWE), Department of Information Technology and Electrical Engineering Zürich (D-ITET), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology Zürich (ETH Zürich)-Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology Zürich (ETH Zürich)

المصدر: 2022 24th International Microwave and Radar Conference (MIKON)
https://hal.science/hal-04315645Test
2022 24th International Microwave and Radar Conference (MIKON), Sep 2022, Gdansk, Poland. pp.1-4, ⟨10.23919/MIKON54314.2022.9924653⟩

مصطلحات موضوعية: modulator-driver, integrated circuit (IC), Indium Phosphide (InP), Double Heterojunction Bipolar Transistor (DHBT), high speed circuits, optical communications, PAM-4 format, Power demand, Power measurement, Quadrature amplitude modulation, Modulation, DH-HEMTs, Predistortion, III-V semiconductor materials, digital-analogue conversion, driver circuits, electro-optical modulation, gallium compounds, heterojunction bipolar transistors, III-V semiconductors, indium compounds, integrated circuit design, integrated circuit measurement, low-power electronics, optimisation, pulse amplitude modulation, DHBT PAM-4 DAC-driver, electrical measurements, electro-optical modulator, circuit measurements

جغرافية الموضوع: Gdansk, Poland

العلاقة: hal-04315645; https://hal.science/hal-04315645Test

الإتاحة: https://doi.org/10.23919/MIKON54314.2022.9924653Test
https://hal.science/hal-04315645Test

المؤلفون: Nodjiadjim, V., Riet, M., Mismer, C., Hersent, Romain, Jorge, F., Konczykowska, A., Dupuy, J.-Y.

المساهمون: III-V lab, a joint lab between NBLF, TRT and CEA-Leti, Alcatel-Thales III-V Lab (III-V Lab), THALES France, Alcatel-Thalès III-V lab (III-V Lab), THALES France -ALCATEL, Nokia Bell Labs

المصدر: ISSN: 2168-6734 ; IEEE Journal of the Electron Devices Society ; https://hal.science/hal-04315920Test ; IEEE Journal of the Electron Devices Society, 2019, 7, pp.748-752. ⟨10.1109/JEDS.2019.2928271⟩.

مصطلحات موضوعية: Heterojunction bipolar transistor, InP/GaInAs DHBT, integrated circuits, Indium phosphide, III-V semiconductor materials, DH-HEMTs, Indium gallium arsenide, Fabrication, Thermal resistance, digital-analogue conversion, driver circuits, gallium arsenide, heterojunction bipolar transistors, III-V semiconductors, indium compounds, pulse amplitude modulation, submillimetre wave integrated circuits, [SPI]Engineering Sciences [physics], [PHYS]Physics [physics]

العلاقة: hal-04315920; https://hal.science/hal-04315920Test

الإتاحة: https://doi.org/10.1109/JEDS.2019.2928271Test
https://hal.science/hal-04315920Test

المؤلفون: Hersent, R., Jorge, F., Duval, B., Dupuy, J.-Y., Konczykowska, A., Riet, M., Nodjiadjim, V., Mismer, C., Blache, F., Kasbari, A., Ouslimani, A.

المصدر: Electronics Letters (Wiley-Blackwell); 7/9/2020, Vol. 56 Issue 14, p691-693, 3p, 2 Diagrams, 1 Chart, 1 Graph

مصطلحات موضوعية: HETEROJUNCTION bipolar transistors, INDIUM phosphide, BANDWIDTHS, PULSE amplitude modulation, LINE drivers (Integrated circuits)

المؤلفون: Konczykowska, A., Jorge, F., Dupuy, J‐Y., Riet, M., Nodjiadjim, V., Aubry, H., Adamiecki, A.

المصدر: Electronics Letters (Wiley-Blackwell); Oct2015, Vol. 51 Issue 20, p1591-1593, 3p

المؤلفون: Dupuy, J.-Y., Konczykowska, A., Jorge, F., Riet, M., Berdaguer, P., Nodjiadjim, V., Godin, J., Ouslimani, A.

المصدر: 2012 IEEE/MTT-S International Microwave Symposium Digest; 1/ 1/2012, p1-3, 3p