التفاصيل البيبلوغرافية
| العنوان: |
Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M ,\times, 4 SDRAM. |
| المؤلفون: |
Edmonds, L. D.1 larry.d.edmonds@jpl.nasa.gov, Scheick, L. Z.1,2 leif.z.scheick@jpl.nasa.gov |
| المصدر: |
IEEE Transactions on Nuclear Science. Dec2008 Part 1 of 2, Vol. 55 Issue 6, p3265-3271. 7p. 3 Graphs. |
| مصطلحات موضوعية: |
*COMPUTER storage devices, DYNAMIC random access memory, CAPACITORS, DIELECTRIC devices, ELECTRIC capacity |
| مستخلص: |
It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor. [ABSTRACT FROM PUBLISHER] |
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| قاعدة البيانات: |
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