-
1
المؤلفون: E. K. Evangelou, S. Galata, A. Dimoulas, Iosif Androulidakis, G. Mavrou, M. S. Rahman
المصدر: Solid-State Electronics. 54:979-984
مصطلحات موضوعية: charge trapping, ge substrates, time-decay, Dielectric, Trapping, dielectric relaxation, Capacitance, Electric charge, trap generation, stacks, Stress (mechanics), silc, cvs, relaxation, Materials Chemistry, oxide-films, Electrical and Electronic Engineering, breakdown, Condensed matter physics, business.industry, Chemistry, Relaxation (NMR), Electrical engineering, hfo2, rare-earth oxides, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, defects generation, la(2)o(3), induced leakage current, electron injection, interface, SILC, business, Voltage
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4886cd329d6a3a5a457239d7bf407d7bTest
https://doi.org/10.1016/j.sse.2010.04.023Test -
2دورية أكاديميةSILC decay in La(2)O(3) gate dielectrics grown on Ge substrates subjected to constant voltage stress
المؤلفون: Rahman, M. S., Evangelou, E. K., Androulidakis, I. I., Dimoulas, A., Mavrou, G., Galata, S.
-
3دورية أكاديمية
المؤلفون: Rahman, M.S.1,2 M.S.Rahman@gsi.de, Evangelou, E.K.2, Androulidakis, I.I.2, Dimoulas, A.3, Mavrou, G.3, Galata, S.3
المصدر: Solid-State Electronics. Sep2010, Vol. 54 Issue 9, p979-984. 6p.
مصطلحات موضوعية: *ELECTRIC leakage, *STRAINS & stresses (Mechanics), *LANTHANUM compounds, *GATE array circuits, *CRYSTAL growth, *GERMANIUM, *POINT defects, *DIELECTRIC relaxation, *RARE earth oxides