Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS2/Bi2Se3 Heterojunctions Based on Vapor Growth
| العنوان: | Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS2/Bi2Se3 Heterojunctions Based on Vapor Growth |
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| المؤلفون: | Lijuan Niu, Lijie Zhang, Shaoming Huang, Yihong She, Quan Du, Kenan Zhang, Shengdong You, Xiaohong Chu, Changchun Ding, Zhen Wu |
| المصدر: | ACS Applied Materials & Interfaces. 13:15518-15524 |
| بيانات النشر: | American Chemical Society (ACS), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Photoluminescence, Materials science, Stacking, Nucleation, Heterojunction, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Volumetric flow rate, Chemical physics, General Materials Science, Density functional theory, 0210 nano-technology |
| الوصف: | Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS2/Bi2Se3 vertical heterojunctions were successfully modulated. High-quality WS2/Bi2Se3 vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS2/Bi2Se3 vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices. |
| تدمد: | 1944-8252 1944-8244 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::6f3d6c62fa5113534d278e2c5e520100Test https://doi.org/10.1021/acsami.1c00377Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........6f3d6c62fa5113534d278e2c5e520100 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
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