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1دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
مصطلحات موضوعية: ddc:530, Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
وصف الملف: application/pdf
الإتاحة: https://doi.org/10.34657/440510.1186/1556-276X-7-594Test
https://oa.tib.eu/renate/handle/123456789/5776Test -
2دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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3دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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4دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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5دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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6دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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7دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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8دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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9دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf
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10دورية أكاديمية
المؤلفون: Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.
المصدر: Nanoscale Research Letters 7 (2012)
مصطلحات موضوعية: Dependent Raman spectroscopy, Gallium arsenide, Gallium arsenide TO phonon, Microtubes, Raman imaging, Raman spectroscopy defects, Rolled up tubes, Strain imaging, Aluminum arsenide, Defects, Etching, Molecular beam epitaxy, Nanotechnology, Phonons, Raman scattering, Raman spectroscopy, Semiconducting gallium, Semiconducting indium, Semiconducting indium gallium arsenide, Semiconductor alloys, Micro-tubes, Sample temperature, Selectively etchings, Temperature stability, Temperature-dependent properties, Temperature-dependent raman, III-V semiconductors
الوقت: 530
وصف الملف: application/pdf