يعرض 1 - 10 نتائج من 17 نتيجة بحث عن '"Matteo Rapisarda"', وقت الاستعلام: 1.35s تنقيح النتائج
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    المساهمون: Calvi, S., Maita, F., Rapisarda, M., Fortunato, G., Valletta, A., Preziosi, V., Cassinese, A., Mariucci, L.

    المصدر: Organic electronics
    61 (2018): 104–112. doi:10.1016/j.orgel.2018.06.026
    info:cnr-pdr/source/autori:Calvi, S.; Maita, F.; Rapisarda, M.; Fortunato, G.; Valletta, A.; Preziosi, V.; Cassinese, A.; Mariucci, L./titolo:Gravure printed organic thin film transistors: Study on the ink printability improvement/doi:10.1016%2Fj.orgel.2018.06.026/rivista:Organic electronics (Print)/anno:2018/pagina_da:104/pagina_a:112/intervallo_pagine:104–112/volume:61

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    المصدر: Organic electronics
    41 (2017): 345–354. doi:10.1016/j.orgel.2016.11.027
    info:cnr-pdr/source/autori:Valletta, A.; Rapisarda, M.; Calvi, S.; Fortunato, G.; Frasca, M.; Maira, G.; Ciccazzo, A.; Mariucci, L./titolo:A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime/doi:10.1016%2Fj.orgel.2016.11.027/rivista:Organic electronics (Print)/anno:2017/pagina_da:345/pagina_a:354/intervallo_pagine:345–354/volume:41

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    المصدر: Journal of display technology 12 (2016): 252–256. doi:10.1109/JDT.2015.2466531
    info:cnr-pdr/source/autori:Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Guglielmo Fortunato, and Luigi Mariucci/titolo:The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs/doi:10.1109%2FJDT.2015.2466531/rivista:Journal of display technology/anno:2016/pagina_da:252/pagina_a:256/intervallo_pagine:252–256/volume:12

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    المساهمون: Tortora, Luca, Urbini, Marco, Fabbri, Andrea, Branchini, Paolo, Mariucci, Luigi, Rapisarda, Matteo, Barra, Mario, Chiarella, Fabio, Cassinese, Antonio, Di Capua, Francesco, Aloisio, Alberto

    المصدر: Applied surface science 448 (2018): 628–635. doi:10.1016/j.apsusc.2018.04.097
    info:cnr-pdr/source/autori:Tortora L.; Urbini M.; Fabbri A.; Branchini P.; Mariucci L.; Rapisarda M.; Barra M.; Chiarella F.; Cassinese A.; Di Capua F.; Aloisio A./titolo:Three-dimensional characterization of OTFT on modified hydrophobic flexible polymeric substrate by low energy Cs+ion sputtering/doi:10.1016%2Fj.apsusc.2018.04.097/rivista:Applied surface science/anno:2018/pagina_da:628/pagina_a:635/intervallo_pagine:628–635/volume:448

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    المساهمون: Integrated Circuits, Emerging Technologies

    المصدر: Solid-State Electronics, 84, 167-178. Elsevier
    Solid-state electronics 84 (2013): 167–178. doi:10.1016/j.sse.2013.02.022
    info:cnr-pdr/source/autori:S. Jacob (1), S. Abdinia (2), M. Benwadih (1), J. Bablet (1), I. Chartier (1), R. Gwoziecki (1), E. Cantatore (2), A.H.M. van Roermund (2), L. Maddiona (3), F. Tramontana (3), G. Maiellaro (4), L. Mariucci (5), M. Rapisarda (5), G. Palmisano (6), R. Coppard (1)/titolo:High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate/doi:10.1016%2Fj.sse.2013.02.022/rivista:Solid-state electronics/anno:2013/pagina_da:167/pagina_a:178/intervallo_pagine:167–178/volume:84

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    المصدر: I.E.E.E. transactions on electron devices (2016). doi:10.1109/TED.2016.2518305
    info:cnr-pdr/source/autori:Giusi, G.; Giordano, O.; Scandurra, G.; Calvi, S.; Fortunato, G.; Rapisarda, M.; Mariucci, L.; Ciofi, C./titolo:Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors/doi:10.1109%2FTED.2016.2518305/rivista:I.E.E.E. transactions on electron devices/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume

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    المصدر: IEEE electron device letters
    37 (2016): 1625–1627. doi:10.1109/LED.2016.2618757
    info:cnr-pdr/source/autori:Giusi, Gino; Scandurra, Graziella; Calvi, Sabrina; Fortunato, Guglielmo; Rapisarda, Matteo; Mariucci, Luigi; Ciofi, Carmine/titolo:Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors/doi:10.1109%2FLED.2016.2618757/rivista:IEEE electron device letters (Print)/anno:2016/pagina_da:1625/pagina_a:1627/intervallo_pagine:1625–1627/volume:37

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    المصدر: Organic electronics
    12 (2011): 447–452. doi:10.1016/j.orgel.2010.12.013
    info:cnr-pdr/source/autori:Simeone D; Rapisarda M; Fortunato G; Valletta A; Mariucci L/titolo:Influence of structural properties on environmental stability of pentacene thin film transistors/doi:10.1016%2Fj.orgel.2010.12.013/rivista:Organic electronics (Print)/anno:2011/pagina_da:447/pagina_a:452/intervallo_pagine:447–452/volume:12