تقرير
Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions
| العنوان: | Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions |
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| المؤلفون: | Lai, Yu-Ren, Yu, Kai-Fu, Lin, Yong-Han, Wu, Jong-Ching, Lin, Juhn-Jong |
| المصدر: | AIP Advances 2, 032155 (2012) |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addition to the direct tunneling conduction mechanism observed in low-$G$ junctions, high-$G$ junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlO$_{x}$ layer owing to large junction-barrier interfacial roughness. Comment: 6 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.4749251 |
| الوصول الحر: | http://arxiv.org/abs/1208.3069Test |
| رقم الانضمام: | edsarx.1208.3069 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.4749251 |
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