التفاصيل البيبلوغرافية
العنوان: |
Observation of vacancy ordering structure in GaP nanobelts |
المؤلفون: |
Tsai, JS, Chen, FR, Kai, JJ, Chen, CC, Huang, RT, Wang, MS, Huang, GC, Guo, GG, Yu, MU |
المساهمون: |
陳福榮 |
بيانات النشر: |
American Institute of Physics |
سنة النشر: |
2004 |
المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
مصطلحات موضوعية: |
GALLIUM-PHOSPHIDE, SEMICONDUCTORS, COMPOSITES, NANOWIRES, V6C5 |
الوقت: |
22 |
الوصف: |
2060109010042 ; 工程與系統科學系 ; III-V semiconductor GaP nanobelts were synthesized with a Fe2O3 catalyst on Si substrates by thermal evaporation at high temperatures. These nanobelts, typically, have a width from 50 to 600 nm and a length of up to several hundred micrometers. Their thickness varies from 10 to 40 nm. A vacancy ordering structure was observed near the edge of the GaP nanobelts. The vacancy ordering structure was analyzed using high-resolution transmission electron microscopy, electron diffraction patterns, and computer simulation. The unit cell of the vacancy ordering structure in the GaP belt is orthorhombic with lattice parameters a=3.767 Angstrom, b=6.525 Angstrom, c=18.456 Angstrom, and alpha=beta=gamma=90degrees. In the [111] projection, the structure is a Rroot3x root3 120degrees superstructure, while in the [211] projection, it exhibits a superstructure in both the ((11) over bar3) and ((2) over bar3 (1) over bar) planes. This defective structure can also be visualized as a long period structure with a superstructure in the (111) stacking plane. (C) 2004 American Institute of Physics. |
نوع الوثيقة: |
journal/newspaper |
وصف الملف: |
98 bytes; text/html |
اللغة: |
English |
تدمد: |
0021-8979 |
العلاقة: |
JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 95, Issue 4, FEB 15 2004, Pages 2015-2019; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47811Test |
الإتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47811Test |
رقم الانضمام: |
edsbas.EB884B12 |
قاعدة البيانات: |
BASE |