التفاصيل البيبلوغرافية
| العنوان: |
Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method. |
| المؤلفون: |
Xiao-Fu Ding1, Peng-Fei Xie1, Yuan-Tao Zhang1, Qing-Liang Liao1, Ji-Bin Fan1,2,3, Hong-Xia Liu2 |
| المصدر: |
Chinese Physics B. Feb2016, Vol. 25 Issue 2, p1-1. 1p. |
| مصطلحات موضوعية: |
*GERMANIUM oxide films, *COMPLEMENTARY metal oxide semiconductors, *ANNEALING of semiconductors, *STRESS relaxation (Mechanics), *HAFNIUM oxide films |
| مستخلص: |
High-κ/Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ/Ge interface. However, these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide (SRPO) method to improve the thermodynamic stability of the high-κ/Ge interface. The x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) results indicate that the GeO volatilization of the high-κ/Ge gate stack is efficiently suppressed after 500 °C annealing, and the electrical characteristics are greatly improved. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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