المؤلفون: Xu YQ, Zhang W, Niu ZC, Wu RH, Wang QM, Xu, YQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yingqxu@red.semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: CHINESE PHYSICS LETTERS; Xu, YQ; Zhang, W; Niu, ZC; Wu, RH; Wang, QM .Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well ,CHINESE PHYSICS LETTERS,MAR 2004,21 (3):521-523; http://ir.semi.ac.cn/handle/172111/8150Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/8150Test

المؤلفون: Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC, Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Inas Quantum Dots, Metamorphic Buffer, Molecular Beam Epitaxy, 半导体化学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition

العلاقة: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; Wu BP; Wu DH; Xiong YH; Huang SS; Ni HQ; Xu YQ; Niu ZC .Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers ,JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,2009 ,9(2):1333-1336; http://ir.semi.ac.cn/handle/172111/7331Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7331Test

المؤلفون: Hao RT (Hao Ruiting), Xu YQ (Xu Yingqiang), Zhou ZQ (Zhou Zhiqiang), Ren ZW (Ren Zhengwei), Ni HQ (Ni Haiqiao), He ZH (He Zhenhong), Niu ZC (Niu Zhichuan), Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Hao, RT (Hao, Ruiting); Xu, YQ (Xu, Yingqiang); Zhou, ZQ (Zhou, Zhiqiang); Ren, ZW (Ren, Zhengwei); Ni, HQ (Ni, Haiqiao); He, ZH (He, Zhenhong); Niu, ZC (Niu, Zhichuan) .MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,NOV 7 2007,40 (21):6690-6693; http://ir.semi.ac.cn/handle/172111/9212Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/9212Test

المؤلفون: Zhao H, Xu YQ, Ni HQ, Zhang SY, Han Q, Du Y, Yang XH, Wu RH, Niu ZC, Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, Improved Luminescence Efficiency, Quantum-wells, Origin, 半导体物理, atomic layer deposition, quantum wells, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition

العلاقة: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Zhao H; Xu YQ; Ni HQ; Zhang SY; Han Q; Du Y; Yang XH; Wu RH; Niu ZC .Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):279-282; http://ir.semi.ac.cn/handle/172111/10724Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10724Test

المؤلفون: Zhao H (Zhao Huan), Xu YQ (Xu Ying-Qiang), Ni HQ (Ni Hai-Qiao), Han Q (Han Qin), Wu RH (Wu Rong-Han), Niu ZC (Niu Zhi-Chuan), Zhao, H, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn, zcniu@red.semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, Improved Luminescence Efficiency, Origin, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition

العلاقة: CHINESE PHYSICS LETTERS; Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) .Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing ,CHINESE PHYSICS LETTERS,2006,23(9):2579-2582; http://ir.semi.ac.cn/handle/172111/10422Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10422Test

المؤلفون: Xu XH, Niu ZC, Ni HQ, Xu YQ, Zhang W, He ZH, Han Q, Wu RH, Jiang DS, Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn

مصطلحات موضوعية: Molecular Beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: ACTA PHYSICA SINICA; Xu, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, W; He, ZH; Han, Q; Wu, RH; Jiang, DS .Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy ,ACTA PHYSICA SINICA,JUN 2005,54 (6):2950-2954; http://ir.semi.ac.cn/handle/172111/8702Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/8702Test

المؤلفون: Niu, ZC, Ni, HQ, Xu, XH, Zhang, W, Xu, YQ, Wu, RH, Niu, ZC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: PHYSICAL REVIEW B; Niu, ZC; Ni, HQ; Xu, XH; Zhang, W; Xu, YQ; Wu, RH .Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices ,PHYSICAL REVIEW B,DEC 2003,68 (23):Art.No.235326; http://ir.semi.ac.cn/handle/172111/8204Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/8204Test

المؤلفون: Pan Z, Li LH, Xu YQ, Zhang W, Lin YW, Zhang RK, Zhong Y, Ren XM, Pan Z,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Molecular-beam Epitaxy, Growth, Wavelength, Gaas, 半导体物理, atomic layer deposition, development, gallium arsenide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour

العلاقة: CHINESE PHYSICS LETTERS; Pan Z; Li LH; Xu YQ; Zhang W; Lin YW; Zhang RK; Zhong Y; Ren XM .GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 mu m ,CHINESE PHYSICS LETTERS,2001 ,18(9):1249-1251; http://ir.semi.ac.cn/handle/172111/12068Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/12068Test

المؤلفون: Xu YQ, Li LH, Pan Z, Lin YW, Wang QM, Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Molecular-beam Epitaxy, Mu-m, 光电子学, atomic layer deposition, chrysanthemum morifolium, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition

العلاقة: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580; Xu YQ; Li LH; Pan Z; Lin YW; Wang QM .Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing .见：SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,159-166; http://ir.semi.ac.cn/handle/172111/13659Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/13659Test

المؤلفون: Jiang, DS, Qu, YH, Ni, HQ, Wu, DH, Xu, YQ, Niu, ZC, Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn

مصطلحات موضوعية: Molecular Beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: JOURNAL OF CRYSTAL GROWTH; Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC .Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,FEB 2 2006,288 (1): 12-17; http://ir.semi.ac.cn/handle/172111/10040Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10040Test