التفاصيل البيبلوغرافية
| العنوان: |
Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si. |
| المؤلفون: |
Porret, C.1, Pantouvaki, M.1, Shimura, Y.1, Loo, R.1, Van Campenhout, J.1, Srinivasan, S. A.1,2,3, Van Thourhout, D.1,2,3, Geiregat, P.2,3,4 |
| المصدر: |
Applied Physics Letters. 10/15/2018, Vol. 113 Issue 16, pN.PAG-N.PAG. 5p. 1 Chart, 3 Graphs. |
| مصطلحات موضوعية: |
*PHOTONICS, *CARRIER density, *SILICON, *GERMANIUM, *SCATTERING (Physics), *OPTICAL interconnects, *PHOTOLUMINESCENCE |
| مستخلص: |
Highly P doped Ge layers are proposed as a material to realize an on-chip laser for optical interconnect applications. In this work, we demonstrate that these donor impurities have a dramatic impact on the excess carrier lifetime and introduce detrimental many-body effects such as linewidth broadening in the gain medium. Linewidth broadening Γopt = 10 meV for undoped Ge and Γopt ≥ 45 meV for Ge with a doping level up to 5.4 × 1019 cm−3 were extracted using photoluminescence spectroscopy and pump-probe spectroscopy. In addition, we observed that the excess carrier lifetime (τc) drops by more than an order of magnitude from 3 ns in undoped Ge to <0.3 ns in doped Ge. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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