التفاصيل البيبلوغرافية
| العنوان: |
A 4.2-mW 6-dB Gain 5–65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver. |
| المؤلفون: |
Lin, Kuei-Cheng, Chiou, Hwann-Kaeo, Chien, Kuan-Hsiu, Yang, Tsung-Yu, Wu, Po-Chang, Ko, Chun-Lin, Juang, Ying-Zong |
| المصدر: |
IEEE Transactions on Microwave Theory & Techniques; Apr2013, Vol. 61 Issue 4, p1516-1522, 7p |
| مصطلحات موضوعية: |
COMPLEMENTARY metal oxide semiconductors, LOW noise amplifiers, ENERGY consumption, ELECTRIC potential, MILLIMETER waves, WIRELESS communications, DIRECT conversion receivers |
| مستخلص: |
A high-gain gate-pumped down-conversion mixer at 60 GHz is realized in a standard 90-nm CMOS process. The proposed mixer adopted a Darlington cell and a microstrip-line Lange coupler to yield wide 3-dB bandwidth from 5 to 65 GHz. The measured performance demonstrates a conversion gain (CG) of 6 dB at 4.2-mW power consumption. The maximum CG is 6.5 dB at 36 GHz. This mixer is then integrated with a three-stage low-noise amplifier, to form a 60-GHz receiver front-end. The receiver achieves a CG of 28 dB with a noise figure of 7.1 dB at 20-mW power consumption from a 1-V supply voltage. The 3-dB RF bandwidth is 14 GHz. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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