Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature
| العنوان: | Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature |
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| المؤلفون: | Si-Chen Lee, Wen‐Shiang Liao |
| المصدر: | Journal of Applied Physics. 81:7793-7797 |
| بيانات النشر: | AIP Publishing, 1997. |
| سنة النشر: | 1997 |
| مصطلحات موضوعية: | Amorphous silicon, Auger electron spectroscopy, Materials science, Silicon, Annealing (metallurgy), Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, engineering.material, Amorphous solid, chemistry.chemical_compound, Crystallography, Polycrystalline silicon, chemistry, Electron diffraction, engineering, Crystallite |
| الوصف: | The interfacial interaction between phosphorus-doped amorphous silicon hydrogen alloy ((n+)a-Si:H) and thermal evaporated Al-1%Si layer after furnace annealing in the temperature range from 150 to 250 °C has been investigated in detail. The scanning electron microscope photographs show that many dendrites were formed on the original (n+)a-Si:H surface at annealing temperature higher than 170 °C. Raman spectroscopy and transmission electron diffraction show that the original (n+)a-Si:H film has been converted to polycrystalline Si with the crystalline Si dendrites on top. The drastic increase (∼4 orders of magnitude) of electrical conductivity of the 200 °C annealed (n+)a-Si:H films with the Al-1%Si removed is caused by the formation of polycrystalline silicon percolation channel in the background area between dendrites. Auger spectroscopy also provides evidence that no aluminum is incorporated into the converted film during silicon recrystallization and thus no SiAl alloy is formed. |
| تدمد: | 1089-7550 0021-8979 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::93658d31573f951180a42ae64ac9271bTest https://doi.org/10.1063/1.365389Test |
| رقم الانضمام: | edsair.doi...........93658d31573f951180a42ae64ac9271b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897550 00218979 |
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