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1تقرير
المؤلفون: Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY, Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
مصطلحات موضوعية: 3c-sic, In-situ Doping, Low-pressure Cvd, Sapphire Substrate, Chemical-vapor-deposition, Competition Epitaxy, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS; Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD ,SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS,2002,389-3(0):339-342; http://ir.semi.ac.cn/handle/172111/11816Test
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2تقرير
المؤلفون: Luo MC, Wang XL, Li JM, Liu HX, Wang L, Sun DZ, Zeng YP, Lin LY, Luo MC,Chinese Acad Sci,Inst Semicond,Novel Semicond Mat Lab,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Atomic Force Microscopy, Raman, Transmission Electron Microscopy, Molecular Beam Epitaxy, Aluminium Nitride, Electron-affinity, Gan, Si(111), 半导体材料, atomic layer deposition, electron affinity, afm (microscopy), afm, scanning force microscopy, atomic force microscope, tem, durchstrahlungs-elektronenmikroskopie, microscopie par transmission, transmission microscopy, tem (microscopy), electron microscopy (transmission), atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy
العلاقة: JOURNAL OF CRYSTAL GROWTH; Luo MC; Wang XL; Li JM; Liu HX; Wang L; Sun DZ; Zeng YP; Lin LY .Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE ,JOURNAL OF CRYSTAL GROWTH,2002,244 (3-4):229-235; http://ir.semi.ac.cn/handle/172111/11768Test
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3تقرير
المؤلفون: Gao F, Huang DD, Li JP, Kong MY, Sun DZ, Li JM, Zeng YP, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Molecular Beam Epitaxy, Semiconducting Gegermanium, Semiconducting Silicon, Bipolar Transistors, Heterojunction Semiconductor Devices, Power, 半导体材料, atomic layer deposition, social dominance, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY .Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2001 ,223(4):489-493; http://ir.semi.ac.cn/handle/172111/12258Test
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4تقرير
المؤلفون: Li JM, Sun GS, Zhu SR, Wang L, Luo MC, Zhang FF, Lin LY, Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
مصطلحات موضوعية: X-ray Diffraction, Molecular Beam Epitaxy, Semiconducting Silicon Compounds, Low-temperature Growth, Films, 半导体材料, x-ray crystallography, atomic layer deposition, photography--films, finite volume method, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, x射线晶体学, x ray diffractometers, atomic layer epitaxial growth, ale, mle growth
العلاقة: JOURNAL OF CRYSTAL GROWTH; Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY .Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):816-819; http://ir.semi.ac.cn/handle/172111/12184Test
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5تقرير
المؤلفون: Wang JX, Sun DZ, Wang XL, Li JM, Zeng YP, Hou X, Lin LY, Wang JX,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Characterization, Molecular Beam Epitaxy, Gallium Compounds, Nitrides, Piezoelectric Materials, Semiconducting Gallium Compounds, Molecular-beam Epitaxy, Heterostructures, Sapphire, Diodes, 半导体材料, atomic layer deposition, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):386-389; http://ir.semi.ac.cn/handle/172111/12170Test
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6تقرير
المؤلفون: Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Si Growth Rate, p Doping, Ph3 Flow Rate, p Segregation, Gsmbe, Chemical-vapor-deposition, Si1-xgex, Phosphorus, Si2h6, Disilane, Si(100), Mbe, 半导体材料, atomic layer deposition, chemical vapor deposition, vapor-plating, bore, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY .Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465; http://ir.semi.ac.cn/handle/172111/12338Test
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7تقرير
المؤلفون: Gao F, Huang DD, Li JP, Lin YX, Kong MY, Li JM, Zeng YP, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gsmbe, Sige Alloy, Doping, Sims, Hbt, Current Gain, Si, 半导体材料, atomic layer deposition, mass spectrometry, ion microprobe, bipolar transistors, metric system, silicon, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY .The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):457-460; http://ir.semi.ac.cn/handle/172111/12336Test
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8تقرير
المؤلفون: Zhang JP, Sun DZ, Li XB, Wang XL, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Hydrogen Contaminant, Gsmbe, Growth, Raman Spectrum, Stress, 半导体材料, atomic layer deposition, residual stresses, stress (mechanics), photoelasticity, thermal stresses, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):429-432; http://ir.semi.ac.cn/handle/172111/12896Test
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9تقرير
المؤلفون: Liu XL, Wang LS, Lu DC, Wang D, Wang XH, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
مصطلحات موضوعية: Movpe, Gan, Gan Buffer, Heavy Si-doping, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY .The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):287-290; http://ir.semi.ac.cn/handle/172111/13170Test
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10تقرير
المؤلفون: Zhang JP, Sun DZ, Wang XL, Li XB, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Mbe, Growth, Buried Alxga1-xn Isolating Layers, Buffer Layer, 半导体材料, atomic layer deposition, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Wang XL; Li XB; Kong MY; Zeng YP; Li JM; Lin LY .The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 ,JOURNAL OF CRYSTAL GROWTH ,1998,192(3-4):471-474; http://ir.semi.ac.cn/handle/172111/13110Test