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1تقرير
المؤلفون: Zhang JP, Sun DZ, Li XB, Wang XL, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Hydrogen Contaminant, Gsmbe, Growth, Raman Spectrum, Stress, 半导体材料, atomic layer deposition, residual stresses, stress (mechanics), photoelasticity, thermal stresses, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):429-432; http://ir.semi.ac.cn/handle/172111/12896Test
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2تقرير
المؤلفون: Zhang JP, Sun DZ, Wang XL, Li XB, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Mbe, Growth, Buried Alxga1-xn Isolating Layers, Buffer Layer, 半导体材料, atomic layer deposition, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Wang XL; Li XB; Kong MY; Zeng YP; Li JM; Lin LY .The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 ,JOURNAL OF CRYSTAL GROWTH ,1998,192(3-4):471-474; http://ir.semi.ac.cn/handle/172111/13110Test
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المؤلفون: Wang JX, Wang XL, Sun DZ, Li JM, Zeng YP, Hu GX, Liu HX, Lin LY, Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
مصطلحات موضوعية: Molecular-beam Epitaxy, Ion-scattering Spectroscopy, Lattice Polarity, Single-crystals, Films, Polarization, Gan(0001), Surfaces, Growth, Diodes, 半导体材料, atomic layer deposition, ion bombardment, single crystals, photography--films, finite volume method, electromagnetic wave polarisation, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition
العلاقة: GAN AND RELATED ALLOYS-2002, 743; Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY .High-mobility Ga-polarity GaN achieved by NH3-MBE .见:MATERIALS RESEARCH SOCIETY .GAN AND RELATED ALLOYS-2002, 743,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,2003,85-90; http://ir.semi.ac.cn/handle/172111/13625Test