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1تقرير
المؤلفون: Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY, Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
مصطلحات موضوعية: 3c-sic, In-situ Doping, Low-pressure Cvd, Sapphire Substrate, Chemical-vapor-deposition, Competition Epitaxy, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS; Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD ,SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS,2002,389-3(0):339-342; http://ir.semi.ac.cn/handle/172111/11816Test
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2تقرير
المؤلفون: Gao F, Huang DD, Li JP, Kong MY, Sun DZ, Li JM, Zeng YP, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Molecular Beam Epitaxy, Semiconducting Gegermanium, Semiconducting Silicon, Bipolar Transistors, Heterojunction Semiconductor Devices, Power, 半导体材料, atomic layer deposition, social dominance, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY .Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2001 ,223(4):489-493; http://ir.semi.ac.cn/handle/172111/12258Test
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3تقرير
المؤلفون: Wang JX, Sun DZ, Wang XL, Li JM, Zeng YP, Hou X, Lin LY, Wang JX,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Characterization, Molecular Beam Epitaxy, Gallium Compounds, Nitrides, Piezoelectric Materials, Semiconducting Gallium Compounds, Molecular-beam Epitaxy, Heterostructures, Sapphire, Diodes, 半导体材料, atomic layer deposition, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):386-389; http://ir.semi.ac.cn/handle/172111/12170Test
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4تقرير
المؤلفون: Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Si Growth Rate, p Doping, Ph3 Flow Rate, p Segregation, Gsmbe, Chemical-vapor-deposition, Si1-xgex, Phosphorus, Si2h6, Disilane, Si(100), Mbe, 半导体材料, atomic layer deposition, chemical vapor deposition, vapor-plating, bore, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY .Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465; http://ir.semi.ac.cn/handle/172111/12338Test
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5تقرير
المؤلفون: Gao F, Huang DD, Li JP, Lin YX, Kong MY, Li JM, Zeng YP, Lin LY, Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gsmbe, Sige Alloy, Doping, Sims, Hbt, Current Gain, Si, 半导体材料, atomic layer deposition, mass spectrometry, ion microprobe, bipolar transistors, metric system, silicon, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY .The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):457-460; http://ir.semi.ac.cn/handle/172111/12336Test
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6تقرير
المؤلفون: Zhang JP, Sun DZ, Li XB, Wang XL, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Hydrogen Contaminant, Gsmbe, Growth, Raman Spectrum, Stress, 半导体材料, atomic layer deposition, residual stresses, stress (mechanics), photoelasticity, thermal stresses, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):429-432; http://ir.semi.ac.cn/handle/172111/12896Test
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7تقرير
المؤلفون: Liu XL, Wang LS, Lu DC, Wang D, Wang XH, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
مصطلحات موضوعية: Movpe, Gan, Gan Buffer, Heavy Si-doping, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY .The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):287-290; http://ir.semi.ac.cn/handle/172111/13170Test
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8تقرير
المؤلفون: Zhang JP, Sun DZ, Wang XL, Li XB, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Gan, Mbe, Growth, Buried Alxga1-xn Isolating Layers, Buffer Layer, 半导体材料, atomic layer deposition, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Wang XL; Li XB; Kong MY; Zeng YP; Li JM; Lin LY .The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 ,JOURNAL OF CRYSTAL GROWTH ,1998,192(3-4):471-474; http://ir.semi.ac.cn/handle/172111/13110Test
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9تقرير
المؤلفون: Liu XL, Lu DC, Wang LS, Wang XH, Wang D, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Movpe, Gan Buffer Layer, Growth Rate, Trimethylgallium, Growth Parameters, Mechanisms, Thermal-decomposition, Quality, Ammonia, Diodes, Mocvd, Gaas, 半导体材料, atomic layer deposition, pyrolysis, mechanism, gallium arsenide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY .The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,193(1-2):23-27; http://ir.semi.ac.cn/handle/172111/13098Test
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10تقرير
المؤلفون: LU DC, LIU XL, WANG D, LIN LY, LU DC CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA
مصطلحات موضوعية: Gallium Antimonide, Omvpe, Gaas1-xsbx, Mocvd, 半导体材料, atomic layer deposition, antimonides de gallium, galliumantimonid, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
العلاقة: JOURNAL OF CRYSTAL GROWTH; LU DC; LIU XL; WANG D; LIN LY.GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE,JOURNAL OF CRYSTAL GROWTH ,1992,124(0):383-388; http://ir.semi.ac.cn/handle/172111/14135Test