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1تقرير
المؤلفون: Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY, Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
مصطلحات موضوعية: 3c-sic, In-situ Doping, Low-pressure Cvd, Sapphire Substrate, Chemical-vapor-deposition, Competition Epitaxy, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS; Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD ,SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS,2002,389-3(0):339-342; http://ir.semi.ac.cn/handle/172111/11816Test
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المؤلفون: Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY, Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
مصطلحات موضوعية: 3c-sic, In-situ Doping, Low-pressure Cvd, Sapphire Substrate, Chemical-vapor-deposition, Competition Epitaxy, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd
العلاقة: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3; Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD .见:TRANS TECH PUBLICATIONS LTD .SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2002,339-342; http://ir.semi.ac.cn/handle/172111/14889Test