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1تقرير
المؤلفون: Wang JX, Sun DZ, Wang XL, Li JM, Zeng YP, Hou X, Lin LY, Wang JX,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
مصطلحات موضوعية: Characterization, Molecular Beam Epitaxy, Gallium Compounds, Nitrides, Piezoelectric Materials, Semiconducting Gallium Compounds, Molecular-beam Epitaxy, Heterostructures, Sapphire, Diodes, 半导体材料, atomic layer deposition, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH; Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):386-389; http://ir.semi.ac.cn/handle/172111/12170Test
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المؤلفون: Wang JX, Sun DZ, Wang XL, Li JM, Zeng YP, Hou X, Lin LY, Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
مصطلحات موضوعية: Characterization, Molecular Beam Epitaxy, Gallium Compounds, Nitrides, Piezoelectric Materials, Semiconducting Gallium Compounds, Molecular-beam Epitaxy, Heterostructures, Sapphire, Diodes, 半导体材料, atomic layer deposition, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
العلاقة: JOURNAL OF CRYSTAL GROWTH, 227; Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,386-389; http://ir.semi.ac.cn/handle/172111/14937Test