التفاصيل البيبلوغرافية
| العنوان: |
Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP. |
| المؤلفون: |
Filho, D. O. Toginho, Dias, I. F. L., Laureto, E., Duarte, J. L., Lourenço, S. A., Poças, L. C., Prabhu, S. S., Klem, J. |
| المصدر: |
Journal of Applied Physics; 6/15/2005, Vol. 97 Issue 12, p123702, 6p, 2 Charts, 6 Graphs |
| مصطلحات موضوعية: |
PHOTOLUMINESCENCE, LUMINESCENCE, EPITAXY, ALLOYS, ELECTROSTATICS, PHYSICS |
| مستخلص: |
We identify quasi-donor-acceptor pair transitions in the photoluminescence spectra of GaAsSb and AlGaAsSb layers, lattice matched to InP, and grown by molecular-beam epitaxy. These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. The presence of Al in the quaternary alloy increases the fluctuation of the electrostatic potential in the epitaxial layer, increasing the variation of recombination energy as a function of intensity excitation in the range of low temperatures. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
