دورية أكاديمية
Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM
| العنوان: | Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM |
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| المؤلفون: | Lin, JH, Wu, YQ, Tang, S, Fan, YL, Yang, XJ, Jiang, ZM, Zou, J |
| بيانات النشر: | American Scientific Publishers |
| سنة النشر: | 2009 |
| المجموعة: | The University of Queensland: UQ eSpace |
| مصطلحات موضوعية: | Molecular-Beam Epitaxy, GE QUANTUM DOTS, C1, 970102 Expanding Knowledge in the Physical Sciences, 970109 Expanding Knowledge in Engineering, 970110 Expanding Knowledge in Technology, 091204 Elemental Semiconductors, 091205 Functional Materials, 100708 Nanomaterials, 100712 Nanoscale Characterisation |
| الوصف: | The distributions of the composition and the strain in the Ge(Si)/Si(001) coherent islands grown by molecular-beam epitaxy are investigated by digital analysis of high resolution transmission electron microscopy (HRTEM) micrographs. Local composition and strain are obtained from the measurement of the lattice displacement based on the Poisson's formula and Vegard's law. The analysis suggests that the islands have high Ge content at the island's central region. The island is partially relaxed by the substrate deformation and strain concentrated around the edge of islands. The alloying of the islands was found due to the Si surface diffusion. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 1533-4880 |
| العلاقة: | orcid:0000-0003-3511-4270; orcid:0000-0001-9435-8043; LX0455717; 2006CB921505 |
| الإتاحة: | https://doi.org/10.1166/jnn.2009.029Test https://espace.library.uq.edu.au/view/UQ:181355Test |
| رقم الانضمام: | edsbas.3286E92 |
| قاعدة البيانات: | BASE |
| تدمد: | 15334880 |
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