Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs
| العنوان: | Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs |
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| المؤلفون: | Mu-Chun Wang, Xuecheng Zou, Wen-Shiang Liao, Yue-Gie Liaw, Chii-Wen Chen |
| المصدر: | Modern Physics Letters B. 32:1850157 |
| بيانات النشر: | World Scientific Pub Co Pte Lt, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Silicon on insulator, Statistical and Nonlinear Physics, Soi finfet, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Fin (extended surface), PMOS logic, CMOS, Gate oxide, 0103 physical sciences, Optoelectronics, Wafer, 0210 nano-technology, business |
| الوصف: | Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of [Formula: see text]–[Formula: see text] characteristics, threshold voltage [Formula: see text], and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance [Formula: see text], channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance [Formula: see text] and drive current. |
| تدمد: | 1793-6640 0217-9849 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::089f6448e8546ff849d0e2dd92fe0654Test https://doi.org/10.1142/s0217984918501579Test |
| رقم الانضمام: | edsair.doi...........089f6448e8546ff849d0e2dd92fe0654 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17936640 02179849 |
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