This work demonstrates the isolation integrity between gate contact and source or drain contact with the variety of source/drain extension lengths. The trend of isolation capability not only linearly followed the extension length, but related to the formation of liner spacer. As the channel width (W fin =0.11μm) was fixed, the I GD leakage at channel lengths L g = 0.24, 0.16, and 10μm with L SDE = 160nm is larger as V G = −Vcc. However, the I GD value with L SDE = 60nm is larger, located at L g = 0.24, 0.12, and 0.5μm as the same voltage bias.
