High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs
| العنوان: | High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
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| المؤلفون: | Wen-Ching Hsieh, Wei-Lun Chu, Wen-Shiang Liao, Mu-Chun Wang, Chii-Ruey Lin, Wen-How Lan |
| المصدر: | Crystals, Vol 11, Iss 262, p 262 (2021) Crystals Volume 11 Issue 3 |
| بيانات النشر: | MDPI AG, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, General Chemical Engineering, Silicon on insulator, 02 engineering and technology, 01 natural sciences, Inorganic Chemistry, MOSFET, Gate oxide, 0103 physical sciences, lcsh:QD901-999, General Materials Science, Voltage source, drive current, Septic drain field, SOI, 010302 applied physics, Channel length modulation, business.industry, CMOS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Modulation, FinFET, early effect, Optoelectronics, lcsh:Crystallography, 0210 nano-technology, business |
| الوصف: | Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (VGS-VT) and the higher drain/source voltage VDS, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length L was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length L is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned. |
| وصف الملف: | application/pdf |
| تدمد: | 2073-4352 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05a60b4e018c414282543b53b546ca10Test https://doi.org/10.3390/cryst11030262Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....05a60b4e018c414282543b53b546ca10 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20734352 |
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