Competitive Growth Mechanism of WS 2 /MoS 2 Vertical Heterostructures at High Temperature

التفاصيل البيبلوغرافية
العنوان: Competitive Growth Mechanism of WS 2 /MoS 2 Vertical Heterostructures at High Temperature
المؤلفون: Hui Ren, Junguang Tao, Hongjian Chen, Chen Shiqiang, Guifeng Chen, Lixiu Guan
المصدر: physica status solidi (b). 254:1700219
بيانات النشر: Wiley, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Materials science, Scanning electron microscope, Thermal desorption, Heterojunction, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, Adsorption, Optical microscope, Chemical physics, law, Desorption, symbols, 0210 nano-technology, Raman spectroscopy
الوصف: The morphology of Van der Waals heterostructures is one of the most important factors that influence the device performance in practical applications. Herein, we used two-step chemical vapor deposition (CVD) method to grow WS2/MoS2 vertical heterostructures on SiO2/Si substrate at high temperature. Optical microscopy, Raman spectroscopy and scanning electron microscopy are used to characterize their morphology and structure properties. At high temperature, the edge atoms in the MoS2 matrix are ready to detach in two different manners. Through competition between desorption of MoS2 and adsorption of WS2, two unusual morphologies with dendritic and tassel edges are formed, which are otherwise not observed for purely thermal desorption of MoS2 at the same condition. The growth mechanisms are discussed in terms of both thermodynamics and kinetic factors.
تدمد: 1521-3951
0370-1972
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::820bf81f5208143fab0d184008b4a595Test
https://doi.org/10.1002/pssb.201700219Test
حقوق: CLOSED
رقم الانضمام: edsair.doi...........820bf81f5208143fab0d184008b4a595
قاعدة البيانات: OpenAIRE