Effect of interrupting film growth on the properties of a-Si: H

التفاصيل البيبلوغرافية
العنوان: Effect of interrupting film growth on the properties of a-Si: H
المؤلفون: Shu-Lin, Wang, Ru-Guang, Cheng, Fritzsche, H.
المصدر: Philosophical Magazine Letters; April 1988, Vol. 57 Issue: 4 p241-245, 5p
مستخلص: This paper compares photbluminescence optical absorption, H-evolution, and infrared vibrational spectra of glow-discharge deposited hydrogenated amorphous silicon, a-Si:H, prepared in three different ways: continuous deposition and deposition interrupted hundreds of times either by a shutter or by shutting off the plasma power. The latter yields an excess hydrogen content, a blue shift of the optical gap, and a decrease in the photoluminescence intensity. The results are related to the initial non-equilibrium plasma chemistry.
قاعدة البيانات: Supplemental Index
الوصف
تدمد:09500839
13623036
DOI:10.1080/09500838808214714