المؤلفون: Rabhi, Selma, Oueldna, Nouredine, Perrin-Pellegrino, Carine, Portavoce, Alain, Kalna, Karol, Benoudia, Mohamed, Cherif, Hoummada, Khalid

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Swansea University, Ecole Nationale Supérieure des Mines et de la Métallurgie, L3M

المصدر: ISSN: 2079-4991.

مصطلحات موضوعية: solid-state reaction, thickness, Ni-thin films, III-IV semi-conductors, in situ X-ray diffraction, intermetallic growth, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

العلاقة: hal-03841787; https://hal.science/hal-03841787Test; https://hal.science/hal-03841787/documentTest; https://hal.science/hal-03841787/file/NanoMat12_02633.pdfTest

الإتاحة: https://doi.org/10.3390/nano12152633Test
https://hal.science/hal-03841787Test
https://hal.science/hal-03841787/documentTest
https://hal.science/hal-03841787/file/NanoMat12_02633.pdfTest

المؤلفون: Seoane, Natalia, Kalna, Karol, Cartoixa, Xavier, Garcia-Loureiro, Antonio

المساهمون: Spain’s Ministerio de Ciencia e Innovación/Xunta deGalicia/ European Regional Development Fund, Spain’s Ministerio de Ciencia, Innovación y Universidades

المصدر: IEEE Transactions on Electron Devices ; volume 69, issue 9, page 5276-5282 ; ISSN 0018-9383 1557-9646

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الإتاحة: https://doi.org/10.1109/ted.2022.3188945Test
http://xplorestaging.ieee.org/ielx7/16/9864631/09831160.pdf?arnumber=9831160Test

المؤلفون: Alnazer, Mohamed, Ghazali, Nor Azlin, Chong, Harold, Cobley, Richard, Li, Lijie, Kalna, Karol

وصف الملف: text

العلاقة: https://eprints.soton.ac.uk/441872/1/SSE_2020_69.pdfTest; Alnazer, Mohamed, Ghazali, Nor Azlin, Chong, Harold, Cobley, Richard, Li, Lijie and Kalna, Karol (2020) Channel mobility and contact resistance in scaled Zno thin-film. Solid-State Electronics, 172, [107867]. (doi:10.1016/j.sse.2020.107867 ).

الإتاحة: https://doi.org/10.1016/j.sse.2020.107867Test
https://eprints.soton.ac.uk/441872Test/
https://eprints.soton.ac.uk/441872/1/SSE_2020_69.pdfTest

المؤلفون: Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, Abdullah, Wasige, Edward, Kalna, Karol

وصف الملف: text

العلاقة: http://eprints.gla.ac.uk/228522/2/228522.pdfTest; Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, A. , Wasige, E. and Kalna, K. (2020) The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability , 115, 113965. (doi:10.1016/j.microrel.2020.113965 )

الإتاحة: https://doi.org/10.1016/j.microrel.2020.113965Test
http://eprints.gla.ac.uk/228522Test/
http://eprints.gla.ac.uk/228522/2/228522.pdfTest

المؤلفون: Islam, Aynul, Aynul, Anika Tasnim, Kalna, Karol

المصدر: Journal of Physics: Conference Series ; volume 1637, issue 1, page 012007 ; ISSN 1742-6588 1742-6596

الإتاحة: https://doi.org/10.1088/1742-6596/1637/1/012007Test

المؤلفون: Nagy, Daniel, Espineira, Gabriel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Kalna, Karol, Seoane, Natalia

المساهمون: Ministerio de Economía y Competitividad, Xunta de Galicia, Consellería de Cultura, Educación e Ordenación Universitaria, Xunta de Galicia, Ministerio de Ciencia, Innovación y Universidades

المصدر: IEEE Access ; volume 8, page 53196-53202 ; ISSN 2169-3536

الإتاحة: https://doi.org/10.1109/access.2020.2980925Test
http://xplorestaging.ieee.org/ielx7/6287639/8948470/09036890.pdf?arnumber=9036890Test

المؤلفون: Iglesias, José M, Nardone, Alejandra, Rengel, Raúl, Kalna, Karol, Martín, María J, Pascual, Elena

المصدر: 2D Materials ; volume 10, issue 2, page 025011 ; ISSN 2053-1583

الإتاحة: https://doi.org/10.1088/2053-1583/acb1c2Test

المؤلفون: Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Espineira, Gabriel, Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

المساهمون: Spanish Government, Xunta de Galicia, Consellería de Cultura, Educación e Ordenación Universitaria, Xunta de Galicia, Centro de Supercomputación de Galicia (CESGA) for the computer resources provided, Programa de Axudas á Etapa Posdoutoral da Xunta de Galicia, RyC program of the Spanish Ministerio de Ciencia, Innovación y Universidades

المصدر: IEEE Access ; volume 7, page 12790-12797 ; ISSN 2169-3536

الإتاحة: https://doi.org/10.1109/access.2019.2892592Test
http://xplorestaging.ieee.org/ielx7/6287639/8600701/08611125.pdf?arnumber=8611125Test

المؤلفون: Duffy, Steven, Benbakhti, Brahim, Kalna, Karol, Boucherta, Mohammed, Zhang, Wei, Bourzgui, Nour Eddine, Soltani, Ali

المساهمون: Liverpool John Moores University (LJMU), Swansea University, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), China Aerospace Science and Industry Corporation (CASIC), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), "This work was supported by the Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool L33AF, U.K"

المصدر: ISSN: 2169-3536.

مصطلحات موضوعية: AlGaN/GaN based devices, ohmic contact, self-heating, infrared camera, high-resolution X-ray diffraction, [SPI]Engineering Sciences [physics]

العلاقة: hal-02273401; https://hal.science/hal-02273401Test; https://hal.science/hal-02273401/documentTest; https://hal.science/hal-02273401/file/Strain-Reduction_Induced_Rise_in_Channel_Temperature_at_Ohmic_Contacts_of_GaN_HEMTs.pdfTest

الإتاحة: https://doi.org/10.1109/ACCESS.2018.2861323Test
https://hal.science/hal-02273401Test
https://hal.science/hal-02273401/documentTest
https://hal.science/hal-02273401/file/Strain-Reduction_Induced_Rise_in_Channel_Temperature_at_Ohmic_Contacts_of_GaN_HEMTs.pdfTest

المؤلفون: Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

المساهمون: Spanish Government, Xunta de Galicia and FEDER, Consellería de Cultura, Educación e Ordenación Universitaria, Spanish Ministry of Economy and Competitiveness and FEDER, Programa de Axudas Etapa Posdoutoral da Xunta de Galicia

المصدر: IEEE Journal of the Electron Devices Society ; volume 6, page 332-340 ; ISSN 2168-6734

الإتاحة: https://doi.org/10.1109/jeds.2018.2804383Test
http://xplorestaging.ieee.org/ielx7/6245494/8232486/08288601.pdf?arnumber=8288601Test