التفاصيل البيبلوغرافية
| العنوان: |
STM OBSERVATION OF GRAPHENE FORMATION USING SiC-ON-INSULATOR SUBSTRATES. |
| المؤلفون: |
NAITOH, M.1 naitoh@elcs.kyutech.ac.jp, OKANO, M.1, KITADA, Y.1, SASAKI, Y.1, OKUBO, Y.1, EDAMOTO, D.1, NAKAO, M.1, OMURA, I.1, IKARI, T.2 |
| المصدر: |
Surface Review & Letters. Oct2011, Vol. 18 Issue 5, p163-167. 5p. 3 Color Photographs. |
| مصطلحات موضوعية: |
*GRAPHENE, *THIN films, *SILICON carbide, *SCANNING tunneling microscopy, *SURFACE chemistry, *THICKNESS measurement, *MOLECULAR structure |
| مستخلص: |
We used scanning tunneling microscopy to investigate graphene formation on an SiC-on-insulator (SiC-OI) substrate. Annealing of an SiC-OI substrate with an SiC thickness of 1500 nm produced a graphene layer on the SiC surface. When the thickness of the SiC film was 5 nm, a graphene layer was not formed on the SiC surface. However, after annealing a C-covered SiC-OI substrate with an SiC thickness of 5 nm, a graphene layer formed on the SiO2 surface. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
Academic Search Index |
