التفاصيل البيبلوغرافية
| العنوان: |
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD |
| المؤلفون: |
Sun GS, Luo MC, Wang L, Zhu SR, Li JM, Zeng YP, Lin LY, Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. |
| بيانات النشر: |
TRANS TECH PUBLICATIONS LTD |
| سنة النشر: |
2002 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
3c-sic, In-situ Doping, Low-pressure Cvd, Sapphire Substrate, Chemical-vapor-deposition, Competition Epitaxy, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd |
| الوصف: |
The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
English |
| العلاقة: |
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3; Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD .见：TRANS TECH PUBLICATIONS LTD .SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2002,339-342; http://ir.semi.ac.cn/handle/172111/14889Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/14889Test |
| رقم الانضمام: |
edsbas.B94DCFB |
| قاعدة البيانات: |
BASE |
