Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators
| العنوان: | Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators |
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| المؤلفون: | Hussein, Siham M., Crowe, Iain F., Clark, Nick, Milošević, Milan, Vijayaraghavan, Aravind, Gardes, Frederic Y., Mashanovich, Goran Z., Halsall, Matthew P. |
| المصدر: | Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-8 (2017) Hussein, S M A, Crowe, I, Clark, N, Milosevic, M, Vijayaraghavan, A, Gardes, F Y, Mashanovich, G Z & Halsall, M 2017, ' Raman mapping analysis of graphene integrated silicon micro-ring resonators ', Nanoscale Research Letters, vol. 12, 200 . https://doi.org/10.1186/s11671-017-2374-4Test |
| بيانات النشر: | SpringerOpen, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | silicon photonics, National Graphene Institute, graphene, ResearchInstitutes_Networks_Beacons/national_graphene_institute, Silicon photonics, lcsh:TA401-492, Physics::Optics, lcsh:Materials of engineering and construction. Mechanics of materials, Graphene, Raman |
| الوصف: | We present a Raman mapping study of monolayer graphene G and 2D bands, after integration on silicon strip-waveguide-based micro-ring resonators (MRRs) to characterize the effects of the graphene transfer processes on its structural and optoelectronic properties. Analysis of the Raman G and 2D peak positions and relative intensities reveal that the graphene is electrically intrinsic where it is suspended over the MRR but is moderately hole-doped where it sits on top of the waveguide structure. This is suggestive of Fermi level 'pinning' at the graphene-silicon heterogeneous interface, and we estimate that the Fermi level shifts down by approximately 0.2 eV from its intrinsic value, with a corresponding peak hole concentration of ~3 × 1012 cm−2. We attribute variations in observed G peak asymmetry to a combination of a 'stiffening' of the E 2g optical phonon where the graphene is supported by the underlying MRR waveguide structure, as a result of this increased hole concentration, and a lowering of the degeneracy of the same mode as a result of localized out-of-plane 'wrinkling' (curvature effect), where the graphene is suspended. Examination of graphene integrated with two different MRR devices, one with radii of curvature r = 10 μm and the other with r = 20 μm, indicates that the device geometry has no measureable effect on the level of doping. |
| وصف الملف: | text |
| اللغة: | English |
| تدمد: | 1931-7573 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4659b27cdbd81fa6c804c7acf93a5b4bTest http://link.springer.com/article/10.1186/s11671-017-2374-4Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.dedup.wf.001..4659b27cdbd81fa6c804c7acf93a5b4b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19317573 |
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