دورية أكاديمية

One-pot synthesis, sensitization and photoelectric performance of calcium doped PbSe thin films.

التفاصيل البيبلوغرافية
العنوان: One-pot synthesis, sensitization and photoelectric performance of calcium doped PbSe thin films.
المؤلفون: Feng, Wenran, Zhang, Xiaoke, Hong, Anni, Lang, Haoze, Li, Yongqi, Yuan, Shiwei, Jiang, Lai
المصدر: Journal of Materials Science: Materials in Electronics; Apr2024, Vol. 35 Issue 10, p1-10, 10p
مستخلص: Over the past few decades, lead selenide (PbSe) thin films have been widely utilized in infrared photonic devices owing to their narrow band gap, large exciton Bohr radius, high carrier mobility and large dielectric constant. The doping of PbSe thin films has presented an intriguing possibility for tuning their band gap and absorption spectrum range. In this study, we present a “one-step” synthesis of calcium-doped PbSe thin films using the chemical bath deposition method, aiming to address the challenges associated with complex processes and expensive elements. We investigate the effects of dopant concentration on the crystal structure, optical properties, and photoelectric properties. At a dopant concentration of 5 mmol/L, the preferred (200) peak shifts towards higher angle direction. Upon sensitization with iodine, an iodine-rich PbI2 phase forms on the top layer of the film, leading to increased barrier heights and efficient electron trapping within the PbI2/PbSe structure. Furthermore, we study the resistance as a function of illumination duration in pristine PbSe, PbSe-Ca and PbSe-Ca-I. Our results show that the resistance change rate of PbSe-Ca is 8%, double that of the pristine PbSe. After sensitization, the resistance change rate increases to 13.82–10.6%, which is 4 times higher than that of the pristine PbSe. These findings demonstrate that Ca-doping combined with iodine sensitization can significantly enhance the photoelectric performance of PbSe thin films. This work presents a new opportunity for the application of lead chalcogenides in optoelectronic devices, which undoubtedly generate substantial interest in fundamental investigations of these materials. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
قاعدة البيانات: Complementary Index
الوصف
تدمد:09574522
DOI:10.1007/s10854-024-12528-1