التفاصيل البيبلوغرافية
| العنوان: |
Transfer bonding of thick silicon nitride film via split of porous silicon |
| المؤلفون: |
X. Q. Bao, Ping Sheng Guo, Yu Chen, Yan Ling Shi, Lianwei Wang, Zong Shen Lai, Yan Fang Ding |
| المصدر: |
SPIE Proceedings. |
| بيانات النشر: |
SPIE, 2004. |
| سنة النشر: |
2004 |
| مصطلحات موضوعية: |
Monocrystalline silicon, chemistry.chemical_compound, Materials science, Silicon, chemistry, Silicon nitride, Anodic bonding, Hybrid silicon laser, Nanocrystalline silicon, chemistry.chemical_element, Strained silicon, LOCOS, Composite material |
| الوصف: |
In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| تدمد: |
0277-786X |
| الوصول الحر: |
https://explore.openaire.eu/search/publication?articleId=doi_________::46067d8eff5d9b1968dfcd9e6b829b2aTest
https://doi.org/10.1117/12.607898Test |
| رقم الانضمام: |
edsair.doi...........46067d8eff5d9b1968dfcd9e6b829b2a |
| قاعدة البيانات: |
OpenAIRE |
