التفاصيل البيبلوغرافية
| العنوان: |
Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiNx:H stacks. |
| المؤلفون: |
Huan, C. C., Huang, Y. T., Tseng, Y. W., Chen, W. H., Fang, T., Li, C. C., Tsai, C. C. |
| المصدر: |
Photovoltaics International; Nov2010, Issue 10, p80-86, 5p |
| مصطلحات موضوعية: |
THERMAL properties of semiconductors, AMORPHOUS semiconductors, ELECTRIC properties of silicon, SILICON nitride, SEMICONDUCTOR wafers, INTEGRATED circuit passivation, EPITAXY |
| مستخلص: |
A hydrogenated amorphous Si (a-Si:H) film, combined with a silicon nitride (SiNx:H) capping layer and a post-deposition anneal, can hugely enhance the surface passivation on crystalline silicon wafers. In this work, the influence of various deposition temperatures of a-Si:H films on the thermal stability of a-Si:H/SiNx:H stacks and a possible mechanism are discussed. Both minority carrier lifetime measurement and grazing-angle XRD were employed to study the thermal stability of a-Si:H/SiNx:H stacks, and the results are interpreted in terms of dihydrides concentration and epitaxial crystallization. With an appropriate thermal treatment, the a-Si:H film deposited at 130°C and capped by SiNx:H showed better passivation performance than 200°C-deposited a-Si:H/SiNx:H stacks, but under an excessive thermal budget the former showed more severe degradation of carrier lifetime. The more dihydride-rich composition within 130°C-deposited a-Si:H/SiNx:H stacks could be regarded as providing more effective intermediates for hydrogen interchanges, but on the other hand, it is also more susceptible to epitaxial crystallization. [ABSTRACT FROM AUTHOR] |
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