Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts
| العنوان: | Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
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| المؤلفون: | Deshi Li, Chii-Wen Chen, Wen-Shiang Liao, Haoshuang Gu, Mu-Chun Wang, Xuecheng Zou, Yue-Gie Liaw |
| المصدر: | Semiconductors. 51:1650-1655 |
| بيانات النشر: | Pleiades Publishing Ltd, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Equivalent series resistance, business.industry, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, P channel, Subthreshold swing, 0103 physical sciences, Electrode, Optoelectronics, Wafer, 0210 nano-technology, business, AND gate, Leakage (electronics) |
| الوصف: | The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDEpFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (G m ) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. |
| تدمد: | 1090-6479 1063-7826 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::35c355f44b8729e1533184789481b715Test https://doi.org/10.1134/s1063782617120120Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........35c355f44b8729e1533184789481b715 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10906479 10637826 |
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