Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).
Summary form only given. We present new spectroscopic results from MOMBE grown Er doped GaN. An overview of the PL from GaN:Er/sapphire observed under below-gap (442 nm) pumping is given. The near infrared PL peaking at 1.54 /spl mu/m is assigned to the intra-4f-subshell Er transition /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/. The red emission line at 668 nm is attributed to the Er/sup 3+/ transition /sup 4/F/sub 9/2//spl rarr//sup 4/I/sub 15/2/.
