التفاصيل البيبلوغرافية
| العنوان: |
A novel technology for manufacturing high performance and good reliability hydrogenated amorphous silicon (a-Si:H) TFT |
| المؤلفون: |
Wang, Quo-Qang |
| مرشدي الرسالة: |
Ting-Chang Chang, An-Kuo Chu, Po-Tsun Liu |
| بيانات النشر: |
NSYSU, 2005. |
| سنة النشر: |
2005 |
| المجموعة: |
NSYSU Electronic Thesis and Dissertation Archive |
| Original Material: |
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708105-164804Test |
| مصطلحات موضوعية: |
a-Si:H TFT, photo leakage current |
| الوصف: |
In this thesis, novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. The new structure a-Si:H TFT process steps is almost unchanged. The masksteops of fabrication new structure TFT are the same as the inverter-staggered TFT. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. a-Si:H is a well-known photosensitivity material. For driving LCD the TFT must be operated with illuminated environment. It will cause the leakage current. The new TFT structure is similar to the light-shield TFT proposed by Akiyama in 1989. So the new structure TFT can not only reduce the schoktty emission leakage current but also the photo-leakage current. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm2/Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology. |
| Original Identifier: |
oai:NSYSU:etd-0708105-164804 |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| الإتاحة: |
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708105-164804Test |
| حقوق: |
Copyright information available at source archive |
| رقم الانضمام: |
edsndl.NSYSU.oai.NSYSU.etd.0708105.164804 |
| قاعدة البيانات: |
Networked Digital Library of Theses & Dissertations |
