يعرض 1 - 4 نتائج من 4 نتيجة بحث عن '"Andrea Barzaghi"', وقت الاستعلام: 0.69s تنقيح النتائج
  1. 1
    دورية أكاديمية

    المصدر: Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)

    مصطلحات موضوعية: Science

    الوصف: Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free Ge microcrystals.

    وصف الملف: electronic resource

  2. 2
    دورية أكاديمية

    المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)

    مصطلحات موضوعية: Medicine, Science

    الوصف: Abstract The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors. In most cases, such structures are achievable only under far-from-equilibrium growth conditions. Controlling the shape and morphology of the growing structures, to meet the strict requirements for an application, is far more complex than in close-to-equilibrium cases. The development of predictive simulation tools can be essential to guide the experiments. A versatile phase-field model for kinetic crystal growth is presented and applied to the prototypical case of Ge/Si vertical microcrystals grown on deeply patterned Si substrates. These structures, under development for innovative optoelectronic applications, are characterized by a complex three-dimensional set of facets essentially driven by facet competition. First, the parameters describing the kinetics on the surface of Si and Ge are fitted on a small set of experimental results. To this goal, Si vertical microcrystals have been grown, while for Ge the fitting parameters have been obtained from data from the literature. Once calibrated, the predictive capabilities of the model are demonstrated and exploited for investigating new pattern geometries and crystal morphologies, offering a guideline for the design of new 3D heterostructures. The reported methodology is intended to be a general approach for investigating faceted growth under far-from-equilibrium conditions.

    وصف الملف: electronic resource

  3. 3
    دورية أكاديمية

    المصدر: Communications Materials, Vol 1, Iss 1, Pp 1-6 (2020)

    الوصف: Mid-infrared optical modulators are important for detecting compounds in a wide range of applications, but are typically limited to short wavelengths. Now, a SiGe waveguide is used to fabricate an optical modulator that can reach wavelengths spanning 5.5 µm to 11 µm.

    وصف الملف: electronic resource

  4. 4

    المساهمون: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Politecnico di Milano [Milan] (POLIMI)

    المصدر: Communications Materials, Vol 1, Iss 1, Pp 1-6 (2020)
    Communications Materials
    Communications Materials, 2020, 1 (1), ⟨10.1038/s43246-019-0003-8⟩

    الوصف: Waveguide integrated optical modulators in the mid-infrared wavelength range are of significant interest for molecular spectroscopy. This is because on-chip synchronous detection can improve the performance of detection systems and can also be used for free-space communications where optical modulators working in atmospheric transparency windows are needed. Here we report optical modulation in a mid-infrared photonic circuit, reaching wavelengths larger than 8 µm. Optical modulation in the wavelength range from 5.5 to 11 µm is shown, relying on a broadband Ge-rich graded-SiGe platform. This demonstration experimentally confirms the free-carrier absorption effect modeling. These results pave the way towards efficient high-performance electrically-driven integrated optical modulators in the mid-infrared wavelength range. Mid-infrared optical modulators are important for detecting compounds in a wide range of applications, but are typically limited to short wavelengths. Now, a SiGe waveguide is used to fabricate an optical modulator that can reach wavelengths spanning 5.5 µm to 11 µm.