دورية أكاديمية

Electromigration analysis of FinFET self-heating

التفاصيل البيبلوغرافية
العنوان: Electromigration analysis of FinFET self-heating
المؤلفون: Zhang Xiaojun, Ji Hao, Nie Bijian
المصدر: Dianzi Jishu Yingyong, Vol 45, Iss 8, Pp 53-60 (2019)
بيانات النشر: National Computer System Engineering Research Institute of China, 2019.
سنة النشر: 2019
المجموعة: LCC:Electronics
مصطلحات موضوعية: electromigration(em), self-heating, advance node, statistic electromigration budge(seb), Electronics, TK7800-8360
الوصف: In advanced node, FinFET processes provide power, performance, and area benefits over planar technologies. But a vexing problem aggravated by FinFET is the greater local device current density, which translates to an increased concern for signal and power rail metal electromigration reliability failures. There is a critical secondary effect, as well the thermal profile of the FinFET influences the temperature of the metal interconnect neighborhood, which accelerates the EM failure rate probability. For now, the thermal impact has been broadly mentioned in the sight of design house. Following foundary′s user guide, Cadence Voltus provides an accurate, powerful and flexible solution. Based on it, we want to check the impact of thermal on high datablock and do more investigation to improve the power planning structure.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: Chinese
تدمد: 0258-7998
العلاقة: http://www.chinaaet.com/article/3000107393Test; https://doaj.org/toc/0258-7998Test
DOI: 10.16157/j.issn.0258-7998.199805
الوصول الحر: https://doaj.org/article/394b81553b3e4197bd597b9b539556c8Test
رقم الانضمام: edsdoj.394b81553b3e4197bd597b9b539556c8
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:02587998
DOI:10.16157/j.issn.0258-7998.199805