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1دورية أكاديمية
المؤلفون: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, Zhi Jin
المصدر: Micromachines, Vol 13, Iss 5, p 748 (2022)
مصطلحات موضوعية: GaN, SBD, Schottky barrier diode, simulation, capacitance collapse, acceptor trap, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
المصدر: Micromachines, Vol 12, Iss 11, p 1296 (2021)
مصطلحات موضوعية: GaN, SBD, Schottky barrier diode, simulation, current collapse, electric field, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
المصدر: Nanomaterials, Vol 10, Iss 4, p 657 (2020)
مصطلحات موضوعية: GaN, inductively coupled plasma (ICP), mesa, sidewall profile, quasi-vertical, Schottky barrier diode (SBD), Chemistry, QD1-999
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu
المصدر: Electronics, Vol 10, Iss 4, p 433 (2021)
مصطلحات موضوعية: vertical, GaN SBD, L band, Schottky diode limiter, high power, Electronics, TK7800-8360
العلاقة: https://www.mdpi.com/2079-9292/10/4/433Test; https://doaj.org/toc/2079-9292Test; https://doaj.org/article/fc98604ca94a4b3f938abce9ff903c9cTest
الإتاحة: https://doi.org/10.3390/electronics10040433Test
https://doaj.org/article/fc98604ca94a4b3f938abce9ff903c9cTest -
5دورية أكاديمية
المؤلفون: Pengfei Li, Shuhua Wei, Xuanwu Kang, Yingkui Zheng, Jing Zhang, Hao Wu, Ke Wei, Jiang Yan, Xinyu Liu
المصدر: Electronics, Vol 10, Iss 855, p 855 (2021)
مصطلحات موضوعية: AlGaN/GaN HEMTs, ohmic contact, oxygen plasma, nitrogen vacancy, inductively coupled plasma (ICP) etching, Electronics, TK7800-8360
العلاقة: https://www.mdpi.com/2079-9292/10/7/855Test; https://doaj.org/toc/2079-9292Test; https://doaj.org/article/75e93faa619e4744a88c935bdc1008d3Test
الإتاحة: https://doi.org/10.3390/electronics10070855Test
https://doaj.org/article/75e93faa619e4744a88c935bdc1008d3Test -
6دورية أكاديمية
المؤلفون: Yue Sun, Xuanwu Kang, Yingkui Zheng, Jiang Lu, Xiaoli Tian, Ke Wei, Hao Wu, Wenbo Wang, Xinyu Liu, Guoqi Zhang
المصدر: Electronics, Vol 8, Iss 5, p 575 (2019)
مصطلحات موضوعية: GaN, Schottky barrier diode (SBD), vertical power devices, edge termination techniques, Electronics, TK7800-8360
العلاقة: https://www.mdpi.com/2079-9292/8/5/575Test; https://doaj.org/toc/2079-9292Test; https://doaj.org/article/a2552996f16e4d98913c6cc9bf22432cTest
الإتاحة: https://doi.org/10.3390/electronics8050575Test
https://doaj.org/article/a2552996f16e4d98913c6cc9bf22432cTest -
7
المؤلفون: Yuan Ji, Sen Huang, Qimeng Jiang, Ruizhe Zhang, Jie Fan, Haibo Yin, Yingkui Zheng, Xinhua Wang, Ke Wei, Xinyu Liu
المصدر: Electronics. 12:1767
مصطلحات موضوعية: Computer Networks and Communications, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Electrical and Electronic Engineering
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::e6ae56a8c7d11c913a70f84bec548a2eTest
https://doi.org/10.3390/electronics12081767Test -
8
المؤلفون: Xinyu Liu, Jing Zhang, Xuanwu Kang, Yingkui Zheng, Shuhua Wei, Ke Wei, Hao Wu, Jiang Yan, Pengfei Li
المصدر: Electronics, Vol 10, Iss 855, p 855 (2021)
Electronics
Volume 10
Issue 7مصطلحات موضوعية: Materials science, Photoluminescence, Computer Networks and Communications, lcsh:TK7800-8360, 02 engineering and technology, 01 natural sciences, Electrical resistivity and conductivity, Saturation current, Etching (microfabrication), 0103 physical sciences, AlGaN/GaN HEMTs, Electrical and Electronic Engineering, Ohmic contact, 010302 applied physics, business.industry, inductively coupled plasma (ICP) etching, Direct current, RF power amplifier, oxygen plasma, lcsh:Electronics, ohmic contact, 021001 nanoscience & nanotechnology, nitrogen vacancy, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Optoelectronics, Inductively coupled plasma, 0210 nano-technology, business
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c928a770f168ac5f7b4c86f23f60133Test
https://www.mdpi.com/2079-9292/10/7/855Test -
9
المؤلفون: Tianchun Ye, Xuanwu Kang, Hao Wu, Xinyu Liu, Ke Wei, Yingkui Zheng, Haitao Zhang, Zhi Jin
المصدر: Micromachines, Vol 12, Iss 1296, p 1296 (2021)
Micromachines
Volume 12
Issue 11مصطلحات موضوعية: Schottky barrier diode, Materials science, SBD, acceptor trap, Article, GaN, Electric field, TJ1-1570, Mechanical engineering and machinery, current collapse, Electrical and Electronic Engineering, Electronic band structure, business.industry, Mechanical Engineering, Doping, Schottky diode, simulation, Acceptor, electric field, conduction band energy, Control and Systems Engineering, Optoelectronics, Transient (oscillation), Current (fluid), business, Technology CAD
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddaf94b211d2777653e6519f98b57f77Test
https://doi.org/10.3390/mi12111296Test -
10
المؤلفون: Tian Xiaoli, Xinyu Liu, Hao Wu, Ke Wei, Jiang Lu, Wenbo Wang, Xuanwu Kang, Guoqi Zhang, Yue Sun, Yingkui Zheng
المصدر: Electronics, Vol 8, Iss 5, p 575 (2019)
مصطلحات موضوعية: edge termination techniques, Fabrication, Materials science, Computer Networks and Communications, Schottky barrier, Schottky barrier diode (SBD), lcsh:TK7800-8360, vertical power devices, Gallium nitride, 02 engineering and technology, 01 natural sciences, GaN, chemistry.chemical_compound, 0103 physical sciences, Electrical and Electronic Engineering, Diode, 010302 applied physics, business.industry, lcsh:Electronics, Schottky diode, SBDS, 021001 nanoscience & nanotechnology, Power (physics), chemistry, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Sapphire, Optoelectronics, 0210 nano-technology, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d6a8a10c03ab72771d92d4253dd81d7Test
https://doi.org/10.3390/electronics8050575Test