دورية أكاديمية
Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering
| العنوان: | Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering |
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| المؤلفون: | Hultman, L, Ljungcrantz, H, Hallin, C, Janzen, E, Sundgren, JE, Pecz, B, Wallenberg, LR |
| المصدر: | Journal of Materials Research; 11(10), pp 2458-2462 (1996) ; ISSN: 0884-2914 |
| بيانات النشر: | Materials Research Society |
| سنة النشر: | 1996 |
| المجموعة: | Lund University Publications (LUP) |
| مصطلحات موضوعية: | Condensed Matter Physics |
| الوصف: | Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| العلاقة: | https://lup.lub.lu.se/record/c8d3f145-af41-44b4-b1e2-3fe59ad5aba2Test; http://dx.doi.org/10.1557/JMR.1996.0309Test; scopus:0030257396 |
| DOI: | 10.1557/JMR.1996.0309 |
| الإتاحة: | https://doi.org/10.1557/JMR.1996.0309Test https://lup.lub.lu.se/record/c8d3f145-af41-44b4-b1e2-3fe59ad5aba2Test |
| رقم الانضمام: | edsbas.A398D806 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/JMR.1996.0309 |
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